- 您现在的位置：买卖IC网 > Sheet目录453 > IXFK250N10P (IXYS)MOSFET N-CH TO-264
IXFK250N10P
IXFX250N10P
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 Outline
g fs
C iss
C oss
C rss
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
50
83
16
4470
290
S
nF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
25
30
50
18
205
77
80
0.15
ns
ns
ns
ns
nC
nC
nC
0.12 ° C/W
° C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
e
J
K
L
L1
P
Q
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
Source-Drain Diode
Q1
R
R1
8.38 8.69
3.81 4.32
1.78 2.29
.330 .342
.150 .170
.070 .090
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
I S V GS = 0V
I SM
Repetitive, Pulse Width Limited by T JM
V SD
I F = 100A, V GS = 0V, Note 1
Characteristic Values
Min. Typ. Max.
250
750
1.3
A
A
V
S 6.04 6.30
T 1.57 1.83
PLUS247 TM Outline
.238 .248
.062 .072
t rr
Q RM
I RM
I F = 125A, -di/dt = 100A/ μ s
V R = 50V, V GS = 0V
0.7
10.4
200
ns
μ C
A
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Dim.
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFK26N100P
MOSFET N-CH 1000V 26A TO-264
IXFK26N60Q
MOSFET N-CH 600V 26A TO-264
IXFK27N80Q
MOSFET N-CH 800V 27A TO-264
IXFK27N80
MOSFET N-CH 800V 27A TO-264AA
IXFK30N110P
MOSFET N-CH 1100V 30A TO-264
IXFK320N17T2
MOSFET N-CH 170V 320A TO264
IXFK32N100P
MOSFET N-CH 1000V 32A TO-264
IXFK32N50Q
MOSFET N-CH 500V 32A TO-264
相关代理商/技术参数
IXFK25N80
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs
IXFK25N90
功能描述:MOSFET 25 Amps 900V 0.33 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK260N17T
功能描述:MOSFET 260A 170V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N100P
功能描述:MOSFET 26 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N120P
功能描述:MOSFET 26 Amps 1200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N60Q
功能描述:MOSFET 28 Amps 600V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N90
功能描述:MOSFET 26 Amps 900V 0.3 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK27N80
功能描述:MOSFET 800V 27A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube